N-Channel Power MOSFET, 600V drain-source voltage, 41mΩ Rds On, and 77.5A continuous drain current. Features a 3V threshold voltage, 6.53nF input capacitance, and fast switching times with a 7ns fall time. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 481W. Packaged in a TO-247-3 plastic housing, this RoHS compliant component is suitable for high-power applications.
PackageTO-247-3
Power481W
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Technical Specifications
Infineon IPW60R041C6 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 77.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.1mm |
| Input Capacitance | 6.53nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 481W |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 481W |
| Radiation Hardening | No |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 23ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R041C6 Datasheet
Download the complete datasheet for Infineon IPW60R041C6 to view detailed technical specifications.
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