The IPW60R041C6XK is a single N-channel MOSFET with a gate to source voltage of 30V and a maximum power dissipation of 481W. It is available in a 3-pin TO-247 package with through hole mount. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-247
MountingThrough Hole
Power481W
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Technical Specifications
Infineon IPW60R041C6XK technical specifications.
General
| Package/Case | TO-247 |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 481W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R041C6XK Datasheet
Download the complete datasheet for Infineon IPW60R041C6XK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.