N-Channel Power MOSFET, 600V Drain-to-Source Voltage, 650V Voltage Rating, and 60A Continuous Drain Current. Features low Rds On of 45mR, 431W Max Power Dissipation, and 6.8nF Input Capacitance. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-247-3 plastic package, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-247-3
Voltage650V
Current60A
Current Rating60A
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Technical Specifications
Infineon IPW60R045CP technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 60A |
| Current | 60A |
| Current Rating | 60A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 431W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| Voltage | 650V |
| DC Rated Voltage | 600V |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R045CP Datasheet
Download the complete datasheet for Infineon IPW60R045CP to view detailed technical specifications.
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