N-channel silicon power MOSFET featuring 600V drain-to-source breakdown voltage and 60A continuous drain current. Offers low on-state resistance of 45mΩ at 10Vgs, with a maximum power dissipation of 431W. Designed for through-hole mounting in a TO-247 plastic package, this single-element FET operates from -40°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 10ns fall time.
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Infineon IPW60R045CPAFKSA1 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 25.4mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 45mR |
| Package Quantity | 240 |
| Power Dissipation | 431W |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
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