N-Channel Power MOSFET featuring 600V drain-source voltage and 0.06 ohm drain-source on-resistance. This single-element, 3-terminal device utilizes silicon Metal-oxide Semiconductor Field-Effect Transistor technology. Packaged in a TO-247 JEDEC standard, it operates across a temperature range from -55°C.
Quick Jump:
Technical Specifications
Infineon IPW60R060P7XKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPW60R060P7XKSA1 Datasheet
Download the complete datasheet for Infineon IPW60R060P7XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.