Infineon
IPW60R125CPFKSA1
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW60R125CPFKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 600V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW60R125CPFKSA1 Datasheet
Download the complete datasheet for Infineon IPW60R125CPFKSA1 to view detailed technical specifications.
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