Infineon
IPW65R019C7
Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
Power446W
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Technical Specifications
Infineon IPW65R019C7 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
650V
Element Configuration
Single
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
446W
Package Quantity
240
Packaging
Rail/Tube
Power Dissipation
446W
Rds On Max
19mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Threshold Voltage
3.5V
Turn-Off Delay Time
106ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R019C7 Datasheet
Download the complete datasheet for Infineon IPW65R019C7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.