N-channel Power MOSFET featuring 650V drain-source voltage and 75A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 19mΩ and a maximum power dissipation of 446W. Designed for through-hole mounting in a TO-247 package, it boasts fast switching characteristics with a fall time of 5ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is suitable for demanding power applications.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R019C7FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 9.9nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 446W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 106ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R019C7FKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R019C7FKSA1 to view detailed technical specifications.
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