Infineon
IPW65R037C6
Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
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Technical Specifications
Infineon IPW65R037C6 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 83.2A |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R037C6 Datasheet
Download the complete datasheet for Infineon IPW65R037C6 to view detailed technical specifications.
No datasheet is available for this part.