Infineon
IPW65R037C6FKSA1
Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247
MountingThrough Hole
Power500W
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Technical Specifications
Infineon IPW65R037C6FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 83.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 7.24nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 500W |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R037C6FKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R037C6FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.