The IPW65R041CFD is a 650V power MOSFET from Infineon, featuring a maximum continuous drain current of 68.5A and a maximum power dissipation of 500W. It has a TO-247-3 package and is suitable for flange mount applications. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It is part of the CoolMOS series and has a threshold voltage of 4V.
PackageTO-247-3
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Technical Specifications
Infineon IPW65R041CFD technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 68.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 127ns |
| Turn-On Delay Time | 34ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R041CFD Datasheet
Download the complete datasheet for Infineon IPW65R041CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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