Infineon
IPW65R041CFD
Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
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Technical Specifications
Infineon IPW65R041CFD technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
68.5A
Drain to Source Voltage (Vdss)
650V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Package Quantity
240
Packaging
Rail/Tube
Rds On Max
41mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
4V
Turn-Off Delay Time
127ns
Turn-On Delay Time
34ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R041CFD Datasheet
Download the complete datasheet for Infineon IPW65R041CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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