N-Channel Power MOSFET, 650V Vds, 68.5A continuous drain current, and 41mΩ Rds On. Features 500W power dissipation and 8.4nF input capacitance. Designed for through-hole mounting in a TO-247 plastic package. Operates from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Power500W
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Technical Specifications
Infineon IPW65R041CFDFKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 68.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 8.4nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 500W |
| Rds On Max | 41mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R041CFDFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R041CFDFKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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