Automotive N-channel Power MOSFET featuring 650V drain-source voltage and 63.3A continuous drain current. This single-element transistor utilizes CoolMOS process technology and offers a low 48mOhm drain-source resistance at 10V. Housed in a 3-pin TO-247 package with a tab, it supports through-hole mounting. Key specifications include a maximum gate-source voltage of 20V and a maximum power dissipation of 500W, operating within a temperature range of -40°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R048CFDA technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
16.13(Max)
Package Width (mm)
5.21(Max)
Package Height (mm)
21.1(Max)
Seated Plane Height (mm)
25.57(Max)
Pin Pitch (mm)
5.44
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
CoolMOS
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
63.3A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
48@10VmOhm
Typical Gate Charge @ Vgs
270@10VnC
Typical Gate Charge @ 10V
270nC
Typical Input Capacitance @ Vds
7440@100VpF
Maximum Power Dissipation
500000mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPW65R048CFDA Datasheet
Download the complete datasheet for Infineon IPW65R048CFDA to view detailed technical specifications.
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