Automotive N-channel Power MOSFET featuring 650V drain-source voltage and 63.3A continuous drain current. This single-element transistor utilizes CoolMOS process technology and offers a low 48mOhm drain-source resistance at 10V. Housed in a 3-pin TO-247 package with a tab, it supports through-hole mounting. Key specifications include a maximum gate-source voltage of 20V and a maximum power dissipation of 500W, operating within a temperature range of -40°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IPW65R048CFDA technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 16.13(Max) |
| Package Width (mm) | 5.21(Max) |
| Package Height (mm) | 21.1(Max) |
| Seated Plane Height (mm) | 25.57(Max) |
| Pin Pitch (mm) | 5.44 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 63.3A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 48@10VmOhm |
| Typical Gate Charge @ Vgs | 270@10VnC |
| Typical Gate Charge @ 10V | 270nC |
| Typical Input Capacitance @ Vds | 7440@100VpF |
| Maximum Power Dissipation | 500000mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPW65R048CFDA Datasheet
Download the complete datasheet for Infineon IPW65R048CFDA to view detailed technical specifications.
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