Infineon
IPW65R048CFDAFKSA1
Power Field-Effect Transistor, 63.3A I(D), 650V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
Power500W
Quick Jump:
Technical Specifications
Infineon IPW65R048CFDAFKSA1 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
63.3A
Drain to Source Resistance
43mR
Drain to Source Voltage (Vdss)
650V
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.44nF
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
500W
Number of Elements
1
On-State Resistance
48mR
Packaging
Rail/Tube
Power Dissipation
500W
Radiation Hardening
No
Rds On Max
48mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, CoolMOS™
Turn-Off Delay Time
85ns
Turn-On Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R048CFDAFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R048CFDAFKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.