N-channel power MOSFET featuring 650V drain-source voltage and 43.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 80mΩ on-state resistance and 391W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -40°C to 150°C with fast switching characteristics including a 6ns fall time. This RoHS compliant component is suitable for automotive applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power391W
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Technical Specifications
Infineon IPW65R080CFDAFKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 43.3A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 4.44nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 391W |
| Mount | Through Hole |
| On-State Resistance | 80mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 391W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R080CFDAFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R080CFDAFKSA1 to view detailed technical specifications.
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