N-channel power MOSFET featuring 650V drain-source voltage and 43.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 80mΩ on-state resistance and 391W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates from -40°C to 150°C with fast switching characteristics including a 6ns fall time. This RoHS compliant component is suitable for automotive applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power391W
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Technical Specifications
Infineon IPW65R080CFDAFKSA1 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
43.3A
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
650V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
4.44nF
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
391W
Mount
Through Hole
On-State Resistance
80mR
Package Quantity
240
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
391W
Rds On Max
80mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, CoolMOS™
Turn-Off Delay Time
85ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R080CFDAFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R080CFDAFKSA1 to view detailed technical specifications.
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