N-Channel Power MOSFET, 650V Vds, 22.4A continuous drain current, and 150mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-247 through-hole mount package with a maximum power dissipation of 195.3W. Operating temperature range is -40°C to 150°C, with input capacitance at 2.34nF. Turn-on delay is 12.4ns and turn-off delay is 52.8ns.
PackageTO-247
MountingThrough Hole
Power195.3W
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Technical Specifications
Infineon IPW65R150CFDAFKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 22.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Not Halogen Free |
| Height | 21.1mm |
| Input Capacitance | 2.34nF |
| Lead Free | Lead Free |
| Length | 16.03mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 195.3W |
| Mount | Through Hole |
| On-State Resistance | 150mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 195.3W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 52.8ns |
| Turn-On Delay Time | 12.4ns |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R150CFDAFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R150CFDAFKSA1 to view detailed technical specifications.
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