Infineon
IPW65R190CFD
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
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Technical Specifications
Infineon IPW65R190CFD technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
17.5A
Drain to Source Voltage (Vdss)
650V
Input Capacitance
1.85nF
Max Operating Temperature
150°C
Max Power Dissipation
151W
Package Quantity
240
Packaging
Rail/Tube
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
4V
Compliance
RoHS
Compliant
Datasheet
Infineon IPW65R190CFD Datasheet
Download the complete datasheet for Infineon IPW65R190CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.