N-channel Power MOSFET, 650V drain-source voltage, 280mΩ Rds On, and 13.8A continuous drain current. Features 12ns fall time and 13ns turn-on delay time, with 105ns turn-off delay. Housed in a TO-247-3 plastic package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 104W. RoHS compliant.
PackageTO-247-3
PolarityN-CHANNEL
Power104W
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Technical Specifications
Infineon IPW65R280C6FKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 950pF |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 13ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R280C6FKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R280C6FKSA1 to view detailed technical specifications.
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