N-channel power MOSFET featuring 650V drain-source breakdown voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 660mΩ. Designed for high-power applications, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 62.5W. The component is housed in a TO-247-3 plastic package, is lead-free and RoHS compliant, and is supplied in rail/tube packaging.
PackageTO-247-3
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPW65R660CFDFKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 615pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Number of Elements | 1 |
| On-State Resistance | 660mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW65R660CFDFKSA1 Datasheet
Download the complete datasheet for Infineon IPW65R660CFDFKSA1 to view detailed technical specifications.
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