N-Channel Power MOSFET, 900V Vdss, 36A Continuous Drain Current, 120mΩ Rds On. Features 417W Max Power Dissipation, 24ns Fall Time, and 70ns Turn-On Delay. This silicon, metal-oxide semiconductor FET is housed in a TO-247 package with through-hole mounting. Operates from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Power417W
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Technical Specifications
Infineon IPW90R120C3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 21.1mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Dual Supply Voltage | 900V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW90R120C3 Datasheet
Download the complete datasheet for Infineon IPW90R120C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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