N-Channel Power MOSFET, 900V Vdss, 36A Continuous Drain Current, 120mΩ Rds On. Features 417W Max Power Dissipation, 24ns Fall Time, and 70ns Turn-On Delay. This silicon, metal-oxide semiconductor FET is housed in a TO-247 package with through-hole mounting. Operates from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPW90R120C3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 21.1mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Dual Supply Voltage | 900V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 417W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 417W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| Width | 5.21mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPW90R120C3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
