N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 1.2Ω drain-source resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 5.1A and a maximum power dissipation of 83W. Encased in a TO-247-3 plastic package with through-hole termination, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 710pF input capacitance and a nominal gate-source voltage of 3V.
PackageTO-247-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon IPW90R1K2C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 710pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Nominal Vgs | 3V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW90R1K2C3 Datasheet
Download the complete datasheet for Infineon IPW90R1K2C3 to view detailed technical specifications.
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