N-channel power MOSFET featuring 650V drain-source voltage and 75A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 19mΩ on-state resistance and 446W maximum power dissipation. Designed for through-hole mounting in a TO-247-4 package, it boasts fast switching speeds with a 30ns turn-on delay and 5ns fall time. The component is RoHS compliant, lead-free, and halogen-free, operating across a temperature range of -55°C to 150°C.
PackageTO-247-4
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPZ65R019C7XKSA1 technical specifications.
General
| Package/Case | TO-247-4 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.9nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 446W |
| Mount | Through Hole |
| Number of Channels | 1 |
| On-State Resistance | 19mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 106ns |
| Turn-On Delay Time | 30ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPZ65R019C7XKSA1 Datasheet
Download the complete datasheet for Infineon IPZ65R019C7XKSA1 to view detailed technical specifications.
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