N-channel power MOSFET, 650V drain-source voltage, 46A continuous drain current, and 45mΩ on-state resistance. Features a TO-247-4 through-hole package, 227W power dissipation, and 150°C maximum operating temperature. This silicon metal-oxide semiconductor FET offers fast switching with a 7ns fall time, 20ns turn-on delay, and 82ns turn-off delay. Halogen-free and lead-free, it is RoHS compliant.
PackageTO-247-4
MountingThrough Hole
PolarityN-CHANNEL
Power227W
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Technical Specifications
Infineon IPZ65R045C7XKSA1 technical specifications.
General
| Package/Case | TO-247-4 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 21.1mm |
| Input Capacitance | 4.34nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 45mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 227W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 20ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPZ65R045C7XKSA1 Datasheet
Download the complete datasheet for Infineon IPZ65R045C7XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.