The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts
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Technical Specifications
Infineon IR2110 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 14 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDIP-T14 |
| Width | 7.62 |
| Length | 19.305 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 15 |
| Supply Voltage-Min | 3.3 |
| Supply Voltage-Max | 20 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IR2110 Datasheet
Download the complete datasheet for Infineon IR2110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.