Infineon
IRF1010EZS
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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Technical Specifications
Infineon IRF1010EZS technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Infineon IRF1010EZS Datasheet
Download the complete datasheet for Infineon IRF1010EZS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.