IRF1010NPBF

Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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Infineon IRF1010NPBF technical specifications.

Max Operating Temperature

175

Number of Terminals

Terminal Position

SINGLE

JEDEC Package Code

TO-220AB

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.