Infineon
IRF1018ESPBF
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
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Technical Specifications
Infineon IRF1018ESPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF1018ESPBF Datasheet
Download the complete datasheet for Infineon IRF1018ESPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.