IRF1310NSTRLPBF

N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 42A. This single-element silicon device offers a low on-resistance of 0.036 ohms. Designed for high-temperature operation up to 175°C, it utilizes a metal-oxide semiconductor field-effect transistor construction. The component is housed in a lead-free plastic D2PAK-3 package with a single terminal position.