N-channel power MOSFET featuring 75A continuous drain current and 40V drain-source voltage. Offers a low on-resistance of 0.004 ohms. This single-element silicon device utilizes a metal-oxide semiconductor field-effect transistor structure. Encased in a TO-262AA plastic package with 3 terminals, it operates up to a maximum temperature of 175°C.
Quick Jump:
Technical Specifications
Infineon IRF1404LPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-262AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF1404LPBF Datasheet
Download the complete datasheet for Infineon IRF1404LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.