N-channel power MOSFET featuring 75A continuous drain current and 40V drain-source voltage. Offers a low on-resistance of 0.004 ohms. This single-element silicon device utilizes a metal-oxide semiconductor field-effect transistor structure. Encased in a TO-262AA plastic package with 3 terminals, it operates up to a maximum temperature of 175°C.
Infineon IRF1404LPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-262AA |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRF1404LPBF to view detailed technical specifications.
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