N-Channel Power MOSFET featuring a continuous drain current of 75A and a drain-source voltage of 55V. This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0053 ohms. Designed with a single element and three terminals, it operates up to a maximum temperature of 175°C. The component utilizes a TO-220AB package.
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Technical Specifications
Infineon IRF1405PBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF1405PBF Datasheet
Download the complete datasheet for Infineon IRF1405PBF to view detailed technical specifications.
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