N-Channel Power MOSFET featuring a continuous drain current of 130A and a maximum drain-source voltage of 75V. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0078 ohms. Designed with 3 terminals and a TO-220AB package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRF1407PBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF1407PBF Datasheet
Download the complete datasheet for Infineon IRF1407PBF to view detailed technical specifications.
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