N-Channel Power MOSFET featuring a continuous drain current of 182A and a drain-source voltage of 200V. This single-element silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0066 ohms. Designed with three terminals in a TO-247AC package, it is suitable for high-power switching applications.
Quick Jump:
Technical Specifications
Infineon IRF200P222 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247AC |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF200P222 Datasheet
Download the complete datasheet for Infineon IRF200P222 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.