N-Channel Power MOSFET featuring a continuous drain current of 182A and a drain-source voltage of 200V. This single-element silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0066 ohms. Designed with three terminals in a TO-247AC package, it is suitable for high-power switching applications.
Quick Jump:
Technical Specifications
Infineon IRF200P222 technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AC
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF200P222 Datasheet
Download the complete datasheet for Infineon IRF200P222 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.