Infineon
IRF200P223
Power Field-Effect Transistor, 100A I(D), 200V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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Technical Specifications
Infineon IRF200P223 technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-247AC
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF200P223 Datasheet
Download the complete datasheet for Infineon IRF200P223 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.