Infineon
IRF320
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
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Technical Specifications
Infineon IRF320 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-204AA |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF320 Datasheet
Download the complete datasheet for Infineon IRF320 to view detailed technical specifications.
No datasheet is available for this part.