Infineon
IRF360
Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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Technical Specifications
Infineon IRF360 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-204AE |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF360 Datasheet
Download the complete datasheet for Infineon IRF360 to view detailed technical specifications.
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