IRF5210SPBF

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

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Infineon IRF5210SPBF technical specifications.

Max Operating Temperature

150

Number of Terminals

Min Operating Temperature

-55

Terminal Position

SINGLE

JEDEC Package Code

TO-263AB

Number of Elements

RoHS

Yes

Eccn Code

EAR99

HTS Code

8541.29.00.95

REACH

not_compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.