P-channel MOSFET featuring 100V drain-source voltage and 38A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.06 ohms. Designed for power applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-263AB (D2PAK-3) package.
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Technical Specifications
Infineon IRF5210STRLPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF5210STRLPBF Datasheet
Download the complete datasheet for Infineon IRF5210STRLPBF to view detailed technical specifications.
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