P-channel MOSFET featuring 100V drain-source voltage and 38A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.06 ohms. Designed for power applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-263AB (D2PAK-3) package.
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Technical Specifications
Infineon IRF5210STRLPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF5210STRLPBF Datasheet
Download the complete datasheet for Infineon IRF5210STRLPBF to view detailed technical specifications.
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