Infineon
IRF5210STRRPBF
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Technical Specifications
Infineon IRF5210STRRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF5210STRRPBF Datasheet
Download the complete datasheet for Infineon IRF5210STRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.