P-channel MOSFET featuring 55V drain-source voltage and 31A continuous drain current. This single-element silicon power transistor offers a low on-resistance of 0.06 ohms. Designed for high-temperature operation up to 175°C, it utilizes a 3-terminal TO-220AB package.
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Technical Specifications
Infineon IRF5305PBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF5305PBF Datasheet
Download the complete datasheet for Infineon IRF5305PBF to view detailed technical specifications.
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