P-channel power MOSFET featuring 55V drain-source voltage and 31A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 0.06 ohms. Designed for high-temperature operation up to 175°C, it utilizes a single-element configuration within a D2PAK-3 plastic package.
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Technical Specifications
Infineon IRF5305STRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF5305STRLPBF Datasheet
Download the complete datasheet for Infineon IRF5305STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.