P-channel power MOSFET featuring 55V drain-source voltage and 31A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-resistance of 0.06 ohms. Designed for high-temperature operation up to 175°C, it utilizes a single-element configuration within a D2PAK-3 plastic package.
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Technical Specifications
Infineon IRF5305STRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF5305STRLPBF Datasheet
Download the complete datasheet for Infineon IRF5305STRLPBF to view detailed technical specifications.
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