Infineon
IRF530NS
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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Technical Specifications
Infineon IRF530NS technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF530NS Datasheet
Download the complete datasheet for Infineon IRF530NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.