IRF5801TRPBF

Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MO-193AA, LEAD FREE, TSOP-6

Quick Jump:

Infineon IRF5801TRPBF technical specifications.

Max Operating Temperature

150

Number of Terminals

Terminal Position

DUAL

JEDEC Package Code

MO-193AA

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.