Infineon
IRF5802
Power Field-Effect Transistor, 0.9A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Quick Jump:
Technical Specifications
Infineon IRF5802 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
6
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF5802 Datasheet
Download the complete datasheet for Infineon IRF5802 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.