Infineon
IRF5803
Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, TSOP-6
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Technical Specifications
Infineon IRF5803 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
6
Terminal Position
DUAL
JEDEC Package Code
MO-193AA
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF5803 Datasheet
Download the complete datasheet for Infineon IRF5803 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.