Infineon
IRF5806PBF
Power Field-Effect Transistor, 4A I(D), 20V, 0.086ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN AND LEAD FREE, TSOP-6
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Technical Specifications
Infineon IRF5806PBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| JEDEC Package Code | MO-193AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF5806PBF Datasheet
Download the complete datasheet for Infineon IRF5806PBF to view detailed technical specifications.
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