Infineon
IRF5810
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, TSOP-6
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Technical Specifications
Infineon IRF5810 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
6
Terminal Position
DUAL
JEDEC Package Code
MO-193AA
Number of Elements
2
Compliance
RoHS
No
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF5810 Datasheet
Download the complete datasheet for Infineon IRF5810 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.