Infineon
IRF60B217
Power Field-Effect Transistor, 60A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Technical Specifications
Infineon IRF60B217 technical specifications.
General
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF60B217 Datasheet
Download the complete datasheet for Infineon IRF60B217 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.