N-channel power MOSFET featuring 60V drain-source voltage and 58A continuous drain current. This single-element silicon device offers a low on-resistance of 0.0099 ohms. Packaged in a TO-252AA (DPAK-3/2) surface-mount package, it utilizes metal-oxide semiconductor field-effect transistor technology.
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Technical Specifications
Infineon IRF60R217 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF60R217 Datasheet
Download the complete datasheet for Infineon IRF60R217 to view detailed technical specifications.
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