N-channel silicon power MOSFET designed for high-performance switching applications. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This transistor offers a continuous drain current of 18A and a drain-source voltage of 200V. Packaged in a 3-pin TO-220AB configuration, it is suitable for through-hole mounting.
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Technical Specifications
Infineon IRF640NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF640NPBF Datasheet
Download the complete datasheet for Infineon IRF640NPBF to view detailed technical specifications.
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