N-channel silicon power MOSFET designed for high-performance switching applications. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This transistor offers a continuous drain current of 18A and a drain-source voltage of 200V. Packaged in a 3-pin TO-220AB configuration, it is suitable for through-hole mounting.
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Technical Specifications
Infineon IRF640NPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF640NPBF Datasheet
Download the complete datasheet for Infineon IRF640NPBF to view detailed technical specifications.
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