N-channel Power MOSFET, single element, enhancement mode, HEXFET technology. Features 20V drain-source voltage, 11A continuous drain current, and 13mΩ drain-source resistance at 10V. Packaged in a 7-pin Direct-FET MQ surface-mount lead-frame SMT with no leads, measuring 5.45mm x 5.05mm x 0.53mm. Operates from -40°C to 150°C.
PackageDirect-FET MQ
MountingSurface Mount
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Technical Specifications
Infineon IRF6602TR1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
Direct-FET MQ
Package Description
Metal Can Direct FET Package
Lead Shape
No Lead
Pin Count
7
PCB
7
Package Length (mm)
5.45(Max)
Package Width (mm)
5.05(Max)
Package Height (mm)
0.53(Max)
Seated Plane Height (mm)
0.7(Max)
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Quad Drain Dual Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Material
Si
Maximum Drain Source Resistance
13@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1420@10VpF
Maximum Power Dissipation
2300mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Infineon IRF6602TR1 Datasheet
Download the complete datasheet for Infineon IRF6602TR1 to view detailed technical specifications.
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