N-channel Power MOSFET, single element, enhancement mode, HEXFET technology. Features 20V drain-source voltage, 11A continuous drain current, and 13mΩ drain-source resistance at 10V. Packaged in a 7-pin Direct-FET MQ surface-mount lead-frame SMT with no leads, measuring 5.45mm x 5.05mm x 0.53mm. Operates from -40°C to 150°C.
PackageDirect-FET MQ
MountingSurface Mount
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Technical Specifications
Infineon IRF6602TR1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | Direct-FET MQ |
| Package Description | Metal Can Direct FET Package |
| Lead Shape | No Lead |
| Pin Count | 7 |
| PCB | 7 |
| Package Length (mm) | 5.45(Max) |
| Package Width (mm) | 5.05(Max) |
| Package Height (mm) | 0.53(Max) |
| Seated Plane Height (mm) | 0.7(Max) |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Material | Si |
| Maximum Drain Source Resistance | 13@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1420@10VpF |
| Maximum Power Dissipation | 2300mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Infineon IRF6602TR1 Datasheet
Download the complete datasheet for Infineon IRF6602TR1 to view detailed technical specifications.
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